Semiconductor device

Details Semiconductor device Semiconductor device

1987-05-05

1989-12-12

Hille, Rolf

357 68, 357 67, H01L 21283, H01L 2354

Patent

active

048871460

ABSTRACT:
A semiconductor device having a TiN film serving as a barrier layer and a TiN.sub.x (0.3<X<0.9) film between a wiring layer and a semiconductor substrate is disclosed. Interposition of the TiN.sub.x film between the semiconductor substrate and the TiN film lowers the contact resistance in the contact region between the semiconductor substrate and the wiring layer and also the leakage current and improves the adhesion between the wiring layer and the semiconductor substrate, so that the characteristics and reliability of the semiconductor device are greatly improved.

REFERENCES:
patent: 3701931 (1972-10-01), Revitz et al.
patent: 4570328 (1986-02-01), Price et al.
patent: 4574298 (1986-03-01), Yamagishi et al.
patent: 4702967 (1987-10-01), Black et al.
patent: 4753851 (1988-06-01), Roberts
Interfacial Reactions Between Aluminum and Transition Metal Nitride and Carbide Films, Wittmer-J. Appl. Phys. 53(2), Feb. 1982, pp. 1007-1012.
Tin Formed by Evaporation as a Diffusion Barrier Between Al and Si-Ting-J. Vac. Sci. Technol., May/Jun. 1982, pp. 14-18.

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