Static information storage and retrieval – Format or disposition of elements
Patent
1999-09-23
2000-10-03
Hoang, Huan
Static information storage and retrieval
Format or disposition of elements
365 51, 365 52, 36523003, 365210, G11C 502
Patent
active
061282081
ABSTRACT:
Provided is a semiconductor memory having a layout structure in which a memory cell has excellent patterning controllability. A pattern of element components (active regions 10 to 15 and 21 to 23 and polysilicon regions 31 to 42) of a memory cell for one memory cell unit of a memory cell array region 1 is identical to that of a dummy cell of a peripheral dummy cell region 3, and both patterns present a line symmetrical relationship with respect to a boundary line BC1. In addition, a pattern of the memory cell for one memory cell unit of the memory cell array region 1 is identical to that of a dummy cell of a power wiring region 2, and both patterns present a line symmetrical relationship with respect to a boundary line BC2.
REFERENCES:
patent: 4855956 (1989-08-01), Urai
patent: 5105385 (1992-04-01), Ohtsuka et al.
Itoh Niichi
Morishima Chikayoshi
Nakase Yasunobu
Watanabe Tetsuya
Hoang Huan
Mitsubishi Denki & Kabushiki Kaisha
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