Semiconductor device

Details Semiconductor device Semiconductor device

1996-07-30

1998-04-21

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257192, H01L 29778

Patent

active

057420777

ABSTRACT:
A semiconductor device comprises a heterostructure which includes first and second mutually separated conductive layers, e.g., active layers in which a respective two-dimensional electron gas can be induced. A source region and drain region each contact both conductive layers. A gate electrode is disposed between the source and drain regions. First and second output contact regions each contact both conductive layers. The first and second output contact regions are positioned between the source and drain and are overlapped by the gate electrode.

REFERENCES:
patent: 5142349 (1992-08-01), Zhu et al.
patent: 5332911 (1994-07-01), von Klitzing et al.
patent: 5561305 (1996-10-01), Smith

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