Semiconductor device

Details Semiconductor device Semiconductor device

1996-12-24

1998-05-26

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257147, 257151, 257153, 257170, H01L 2974

Patent

active

057570353

ABSTRACT:
In a surface of a silicon substrate of one conductivity type, there are formed a plurality of depressions or recesses, gate regions of opposite conductivity type are formed at bottoms of respective recesses, gate electrodes are provided on respective gate regions, and an electrically conductive block is joined to the surface of the semiconductor substrate. Between the surface of the semiconductor substrate and the electrically conductive block a contact region having a high impurity concentration and/or an electrically conductive material layer may be provided in order to improve electrical and mechanical properties of the contact between the semiconductor substrate and the electrically conductive block. The gate region can have a high impurity concentration and a distance between a channel region and the electrically conductive block can be very small.

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