1975-03-24
1977-03-22
Lynch, Michael J.
357 54, 357 59, H01L 2934
Patent
active
040140377
ABSTRACT:
A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.
REFERENCES:
patent: 3391287 (1968-07-01), Kao et al.
patent: 3649884 (1972-03-01), Haneta
patent: 3710204 (1973-01-01), Batz
patent: 3755721 (1973-08-01), Frohman-Bentchkowsky
patent: 3878549 (1975-04-01), Yamazaki et al.
W. Steinmaier et al., "Successive Growth of Si and SiO.sub.2 in Epitaxial Apparatus," J. of Electro Chem. Soc., vol. III, No. 2, Feb. 1964, pp. 206-209.
Aoki Teruaki
Hayashi Hisao
Kawada Yoshiyuki
Matsushita Takeshi
Yamoto Hisayoshi
Clawson Jr. Joseph E.
Lynch Michael J.
Sony Corporation
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1959655