1980-11-25
1983-08-23
Davie, James W.
12 22, 12 38, H01L 2948, H01L 2974, H01L 2980
Patent
active
044007108
ABSTRACT:
A semiconductor device having its carrier-injecting region formed with a Schottky structure, and arranged so that the current flowing through the Schottky barrier by virtue of tunnel effect is controlled by a controlling electrode to thereby control the drain or collector or anode current. Thus, this device has a large current density and a large current gain. This device can be used not only as a discrete one, but also it is quite suitable when applied to integrated circuits.
REFERENCES:
patent: 4216029 (1980-08-01), Ohki
patent: 4223328 (1980-09-01), Terasawa et al.
patent: 4317127 (1982-02-01), Nishizawa
Nishizawa Jun-ichi
Ohmi Tadahiro
Takahashi Keishiro
Davie James W.
Zaidan Hojin Handotai Kenkyu Shinkokai
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