1977-11-02
1980-01-08
Davie, James W.
357 59, 357 71, 357 92, H01L 2704
Patent
active
041830377
ABSTRACT:
The invention relates to a semiconductor device in which a crossing connection is realized by using parts of a layer of refractory conductive material already present for masking as a part of a current conductor separated from a crossing conductor by an insulation layer. The mask of refractory material may also define the regions in which switching transistors are realized. The invention results in important advantages, in connection with density and crossing connections, in particular in I.sup.2 L-circuits.
REFERENCES:
patent: 3525020 (1970-08-01), Schmitz
patent: 4056810 (1977-11-01), Hart et al.
patent: 4078208 (1978-03-01), Hart et al.
patent: 4109275 (1978-08-01), Sarkary
Hart Cornelis M.
Le Can Claude J. P. F.
Wulms Hendricus E. J.
Briody Thomas A.
Cannon, Jr. James J.
Connors, Jr. Edward J.
Davie James W.
U.S. Philips Corporation
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