Semiconductor device

Details Semiconductor device Semiconductor device

1986-03-06

1987-02-17

Van Balen, William J.

Stock material or miscellaneous articles

Composite

Of silicon containing

428448, 428698, 428699, B32B 904

Patent

active

046439501

ABSTRACT:
In a laminated semiconductor device comprising a substrate, an insulating layer formed on the substrate and at least one active layer formed on the insulating layer, the insulating layer contains an AlN layer as an interlayer insulating film.

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patent: 4542073 (1985-09-01), Tanaka et al.
patent: 4590130 (1986-05-01), Cline
2nd Workshop on Future Electron Device--SOI Technology and 3D Integration--[FED SOI/3D Workshop], Mar. 19-21, 1985, pp. 19-23, "Laser Recrystallization on Multi-Layered Structure".
"Three Dimensional CMOS IC's Fabricated by Using Beam Recrystallization" IEEE, Electron Device Letters, vol. EDL-4, No. 10, Oct. 1983.
"Amorphous Si/Crystalline--Si Facet Formation During Si Solid Phase Epitaxy near Si.SiO.sub.2 Boundary", J. Applied Physics, 56 (12), Jul. 15, 1984, pp. 279-285.
"Disclocations and Twins Formed in Zone Melted Recrystallized Si on SiO.sub.2 ", J. Applied Physics, 56 (8), Oct. 15, 1984, pp. 2213-2217.
"Measurement of Local Stress in Laser-Recrystallized Lateral Epitaxial Silicon Films over Silicon Dioxide Using Raman Scattering", Appl. Phys. Lett. 43 (2), Jul. 15, 1983.
"Determination of Existing Stress in Silicon Films on Sapphire Substrate Using Raman Spectroscopy", Solid--State Electronics, vol. 23, pp. 31-33.
"Multilayer CMOS Device Fabricated on Laser Recrystallized Silicon Islands", IEDM 83.

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