1990-04-10
1992-02-25
James, Andrew J.
357 42, 357 43, H01L 2910
Patent
active
050917609
ABSTRACT:
A semiconductor device includes a semiconductor substrate, a bipolar transistor and a MOS transistor. The bipolar transistor is formed on the semiconductor substrate and has electrodes. A base electrode of the bipolar transistor and the electrodes of the MOS transistor contain the same kind of impurity so as to form a single layer.
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Maeda Takeo
Momose Hiroshi
Dang Hung Xuan
James Andrew J.
Kabushiki Kaisha Toshiba
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