Semiconductor device

Details Semiconductor device Semiconductor device

1990-03-05

1992-02-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437173, 148DIG91, H01L 21263

Patent

active

050913344

ABSTRACT:
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semiconductor region formed primarily of semi-amorphous semiconductor. The second semiconductor region has a higher degree of conductivity than the first semiconductor region so that a semiconductor element may be formed.

REFERENCES:
patent: 3271632 (1966-09-01), Hartmann
patent: 3585088 (1971-06-01), Schwuttke
patent: 4239554 (1980-12-01), Yamazaki
patent: 4240843 (1980-12-01), Celler et al.
patent: 4254429 (1981-03-01), Yamazaki
patent: 4272880 (1981-06-01), Pashley
patent: 4498092 (1985-02-01), Yamazaki
patent: 4581620 (1986-04-01), Yamazaki et al.
Matsuda et al., "Electrical and Structural Properties of Phosphorus-Doped Glow-Discharge Si:F:H and Si:H Films", Japanese Journal of Applied Physics vol. 19, No. 6, Jun., 1980, pp. L305-L308.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1892695