Semiconductor device

Details Semiconductor device Semiconductor device

1995-02-03

1995-08-29

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257280, 257285, 257287, 257472, H01L 2980

Patent

active

054462967

ABSTRACT:
In this MESFET, an undoped AlInAs layer 120, an undoped InP layer 130, an n-InGaAs layer 140, an undoped InP layer 150, and an AlInAs layer 160 are formed on a semi-insulating InP substrate 110. A source electrode 410, a drain electrode 430, and a gate electrode 420 are formed on the AlInAs layer 160. The source electrode 410 and the drain electrode 430 are in ohmic contact with the AlInAs layer 160, and the gate electrode 420 forms a Schottky junction with the AlInAs layer 160.

REFERENCES:
patent: 4814836 (1989-03-01), Thompson
patent: 5012301 (1991-04-01), Xu et al.
patent: 5023674 (1991-06-01), Hikosaka et al.
patent: 5151757 (1992-09-01), Enoki et al.
Japanese Patent Abstract for Japaneses Laid-Open Patent Application No. JP-A-11 83 859, published Jul. 21, 1989, entitled "Hetero-Junction Field Effect Tansistor", by Shigeru Nakajima, Abstract vol. 13, No. 468 (E-834) (3816) dated Oct. 23, 1989.
"Influence of the Well Composition and Thickness in the GaInP/InP/GaInP Structure for Hemt", Indium Phosphide and Related Materials, Apr. 1991, Caridd, Wales, UK, pp. 434-437, XP 239081 S. Loualiche, et al.
"High-Performance InAlAs/InGaAs Hemt's and MESFET's" IEEE Electron Device Letters; vol. 9, No. 7, Jul. 1988, pp. 328-330, A. Fathimulla, et al.

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