Semiconductor device

Details Semiconductor device Semiconductor device

1986-04-01

1987-05-12

Edlow, Martin H.

357 4, 357 49, H01L 2978

Patent

active

046654194

ABSTRACT:
A semiconductor device, particularly, an SOS type MOS IC, has semiconductor islands for elements (i.e., active regions). An insulator region isolating the islands includes stripe portions and wide portions at points where the stripe portions join. The stripe portions are formed by oxidizing sides of silicon island portions and have a width of from 30 nm to 2 .mu.m. At the same time, the wide portions are formed by oxidizing completely thin bridge portions of the silicon island portions. A gate electrode with a gate insulating layer runs across one of the semiconductor islands and an end of the gate electrode is present above the adjacent semiconductor island.

REFERENCES:
patent: 3484662 (1909-12-01), Hagon
patent: 3658586 (1972-03-01), Wang
patent: 3743552 (1973-07-01), Fa
patent: 4348804 (1982-09-01), Ogawa
patent: 4418470 (1983-12-01), Naster
IBM Technical Disclosure Bulletin, vol. 20, No. 4, Sep. 1977, "Extending the Minimal Dimensions of Photolithographic Integrated-Circuit Fabrication Processing", by Abbas et al., pp. 1376-1378.
Electronics International, vol. 50, No. 11, May 1977, "Process Refinements Bring C-MOS on Sapphire into Commercial Use", by Capell et al., pp. 99-105.

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