Semiconductor device

Details Semiconductor device Semiconductor device

1997-02-06

1998-06-16

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, 257 15, 257 17, H01S 319, H01L 2906

Patent

active

057683034

ABSTRACT:
A semiconductor device includes a first conductivity type cladding layer; a second conductivity type cladding layer; an active layer of a semiconductor sandwiched between the first conductivity type cladding layer and the second conductivity type cladding layer; and a second conductivity type superlattice barrier layer sandwiched between the active layer and the second conductivity type cladding layer and having a superlattice structure including a first compound semiconductor having a larger energy band gap than the active layer and a second compound semiconductor having a smaller energy difference in the conduction band than the first compound semiconductor and a larger energy difference in the valence band than the first compound semiconductor, the first and second conductivity type compound semiconductors being alternatingly laminated in at least one pair of layers. The energy barrier provided between the active layer and the second conductivity type cladding layer has a sufficient height to prevent overflow of carriers and to improve LD characteristics, particularly operation at a high temperature.

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