Semiconductor device

Details Semiconductor device Semiconductor device

1996-03-26

1997-08-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 63, H01L 2348, H01L 2352, H01L 2940

Patent

active

056568592

ABSTRACT:
An impurity diffusion surface layer is formed in a surface of a silicon substrate, and an aluminum electrode is arranged in direct contact with the impurity diffusion layer. The surface layer contains Ge as an impurity serving to change the lattice constant in a concentration of at least 1.times.10.sup.21 cm.sup.-1 under a thermal non-equilibrium state. The lattice constant of the surface layer is set higher than that of silicon containing the same concentration of germanium under a thermal equilibrium state. As a result, it is possible to decrease the Schittky barrier height at the contact between the surface layer and the electrode. The surface layer also contains an electrically active boron as an impurity serving to impart carriers in a concentration higher than the critical concentration of solid solution in silicon under a thermal equilibrium state. The presence of Ge permits the carrier mobility within the surface layer higher than that within silicon.

REFERENCES:
patent: 4928156 (1990-05-01), Alvis
patent: 4939561 (1990-07-01), Yamaka
patent: 5216271 (1993-06-01), Takagi et al.
patent: 5241197 (1993-08-01), Murakami et al.
patent: 5336903 (1994-08-01), Oztork et al.

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