Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-02-04
1990-07-10
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 234, 357 34, 357 38, 357 41, 357 47, 357 55, 307303, 307318, 307570, 307589, 307584, H01L 2702, H01L 2978, H01L 2906
Patent
active
049410300
ABSTRACT:
A semiconductor device in which, in a planar type bipolar transistor having a collector layer (22) in a substrate side, a base layer (23) formed on the collector layer (22) and an emitter island (24) formed in the base layer (23), a groove (25) is provided in the emitter island (24) to reach at least the interface between the base layer (23) and the collector layer (22) to form a conductive film (27) through a dielectric film (26) in the groove to be employed as a gate electrode of a MOS-FET thereby to implement a monolithic parallel Bi-MOS device, while the base electrode (28) of the bipolar transistor (40) and the gate electrode (29) of the MOS-FET (50) are connected with a help of diodes including a zener diode (10) thereby to implement a monolithic three-terminal parallel Bi-MOS switching device of small chip size.
REFERENCES:
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patent: 4331969 (1982-05-01), Baliga
patent: 4402003 (1983-08-01), Blanchard
patent: 4441117 (1984-04-01), Zommer
patent: 4546367 (1985-10-01), Schutten et al.
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Advanced Technology, Session XVIII, ISSCC 77, Feb. 18, 1977, Internat'l Solid State Circuits Conf., vol. 20, No. 20.
Die Schaltungstechnik von Leistungs-MOSFETS, Electronik Arbeitsblatt Nr. 161, vol. 32, (1983).
"A Comparison Between BIMOS Device Types", M. S. Adler, IEEE Power Electronics Specialists Conference, Jun. 1982, pp. 371-377.
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan Van
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