Semiconductor device

Details Semiconductor device Semiconductor device

1975-03-06

1979-06-05

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 28, 357 51, 357 52, 357 59, 307303, 307299R, H01L 2940, H01L 2702, H01L 2904

Patent

active

041575636

ABSTRACT:
A semiconductor device having a planar p-n junction which in order to increase the breakdown voltage is shunted by a resistance layer of a very high resistance provided on an insulating layer. According to the invention, a resistance layer is used in the form of an elongate strip. The strip is preferably in the form of a coil, or a number of concentric contact layers present on the insulating layer are used which cross the resistance layer and assume the potential of the resistance layer at the area of the cross-over.

REFERENCES:
patent: 3405329 (1968-10-01), Loro et al.
patent: 3562608 (1971-02-01), Gallagher
patent: 3576478 (1971-04-01), Watkins
patent: 3614480 (1971-10-01), Berglund
patent: 3699646 (1972-10-01), Vadasz
patent: 3728590 (1973-04-01), Kim et al.

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