Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-05-12
1999-06-22
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257209, 257665, 3652257, H01L 2362, H01L 27112
Patent
active
059145242
ABSTRACT:
A semiconductor device has a semiconductor substrate on which are formed semiconductor devices. A wiring is provided to make electrical connection between the devices. First fuse elements are formed on the substrate and connected to the wiring. A second fuse element is also formed on the same plane as the first fuse elements on the substrate and provided in proximity to a portion of each first fuse element to be blown. Both the first and second fuse elements may be formed by a composite layer of titanium nitride film and a titanium film formed over the titanium nitride film, and a tungsten or aluminium film formed over the composite layer. The first and second fuse elements may have the same width. The first fuse elements may be linearly arranged and two of the first fuse elements adjacent to each other may share the second fuse element, or a flow catchment, provided in proximity to both fuse elements.
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Hardy David B.
Kabushiki Kaisha Toshiba
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