Semiconductor device

Details Semiconductor device Semiconductor device

1990-12-21

1991-12-03

Wojciechowicz, Edward J.

357 15, 357 68, H01L 2980

Patent

active

050703765

ABSTRACT:
A semiconductor device includes an FET having side gate electrodes. The FET has a plurality of side gate electrodes, and the side gate electrodes, side gate input terminals and lead wires connecting them are arranged such that a difference between electrical lengths from the side gate electrodes to the input terminals (pads) is smaller than a quarter wavelength of the input signals thereto. Thus, even if a microwave signal is applied to the side gate input terminals, the signals reach the side gate electrodes with substantially the same phase and the side gate effect extends to the entire gate electrode.

REFERENCES:
patent: 4611184 (1986-09-01), Kumar
patent: 4982247 (1991-01-01), Aoki et al.

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