Semiconductor device

Details Semiconductor device Semiconductor device

1998-03-18

1999-11-30

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257296, 257339, H01L 2358, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

059947640

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a source and drain, a gate electrode, a first insulating underlayer, and a nitride film. The source and drain are formed on a major surface of the semiconductor substrate to be separated from each other. The gate electrode is formed on the semiconductor substrate between the source and the drain via a gate insulating film. The first insulating underlayer is formed to cover an entire surface of the semiconductor substrate including the gate electrode. The nitride film has a predetermined thickness and is formed on the first insulating underlayer so as to set a distance between the nitride film and the gate insulating film to be 20 times or less the thickness of the nitride film.

REFERENCES:
patent: 5095346 (1992-03-01), Bae et al.
patent: 5444653 (1995-08-01), Nagasawa et al.
patent: 5717236 (1998-02-01), Shinkawata

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