Semiconductor device

Details Semiconductor device Semiconductor device

1982-09-24

1986-11-18

James, Andrew J.

357 43, 357 40, 357 44, H01L 2974

Patent

active

046239103

ABSTRACT:
A semiconductor device is manufactured similar to a gate turn off (GTO) thyristor but employs PNP bipolar transistors in place of the usual anode P islands. In one modification, the PNP bipolar transistors of the basic device are replaced with P channel, enhancement mode MOSFETs.

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IBM Technical Disclosure Bulletin, vol. 20, #6, 11/77, "MOS Gate Turn Off Lateral SCR" by Perner.

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