Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1998-04-29
2000-05-02
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257655, H01L 310328
Patent
active
060575662
ABSTRACT:
A semiconductor device includes a buffer layer (23) having a doped region (24), a barrier layer (26) over the buffer layer (23) and having a doped region (27), and a channel layer (25) located between the buffer layer (23) and the barrier layer (26) where the doping density of the doped region (27) in the barrier layer (26) is higher than the doping densities of the channel layer (25) and the doped region (24) in the first buffer layer (23).
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Eisenbeiser Kurt W.
Huang Jenn-Hwa
Nair Vijay K.
Wang Yang
Koch William E.
Motorola Inc.
Prenty Mark V.
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