Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Patent
1996-08-09
1998-04-28
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
257 81, 257 99, H01L 2906, H01L 2715, H01L 3112, H01L 3300
Patent
active
057448574
ABSTRACT:
A semiconductor device includes a silicon substrate having a surface and a 20.about.150 .mu.m deep recess produced at the surface by anisotropic etching, the recess having a bottom and a plurality of side walls; an electrode disposed on a region at the bottom of the recess, the region including an element region where a semiconductor element is to be mounted and a wire bonding region where a wire is to be bonded; a semiconductor element mounted on a portion of the electrode within the element region; and a wire bonded to a portion of the electrode within the wire bonding region. In this semiconductor device, since the electrode is disposed at the flat bottom of the recess, there is no difference in level, i.e., no step, in the region, where the electrode is disposed, between the element region and the wire bonding region. Therefore, unwanted breaking of the electrode is avoided, and degradation of characteristics due to such a breaking is avoided.
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Clark S. V.
Mitsubishi Denki & Kabushiki Kaisha
Saadat Mahshid D.
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