Semiconductor device

Details Semiconductor device Semiconductor device

1975-10-07

1977-06-28

Wojciechowicz, Edward J.

357 34, 357 35, 357 40, 357 88, 357 89, 357 90, H01L 2900, H01L 2972, H01L 29747, H01L 2702

Patent

active

040329577

ABSTRACT:
A semiconductor device having a high emitter-grounded current gain which includes an emitter region with the minority carrier diffusion length greater than its width and an additional region adjacent to the emitter region with the minority carrier diffusion length of this additional region greater than its width. The surface recombination velocity of the additional region is small. The minority carrier current injected from the additional region into the emitter balances that injected from the base into the emitter.

REFERENCES:
patent: 2822310 (1958-02-01), Stieltjes

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1525378