Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent
1995-06-06
1999-01-12
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
257 57, 257 59, 257 66, 257 69, 257 63, 257 70, H01L 2904, H01L 29786
Patent
active
058594434
ABSTRACT:
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element may be formed.
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Nagata Yujiro
Yamazaki Shunpei
Ferguson Jr. Gerald J.
Jackson, Jr. Jerome
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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