Semiconductor device

Details Semiconductor device Semiconductor device

1989-07-05

1992-03-17

Hille, Rolf

357 40, 357 44, 357 237, 357 2312, H01L 2702, H01L 2701, H01L 2978

Patent

active

050973118

ABSTRACT:
A CMOS inverter circuit incorporating a P channel MOSFET and an N channel MOSFET, both of which can achieve surface conduction, is provided while maintaining the prescribed miniaturization. Thus, the threshold value and conductance of the both MOSFETs are independent of the thickness of the silicon film, and can be easily controlled in the manufacturing processes thereof.

REFERENCES:
patent: 3840888 (1974-10-01), Gaensslen et al.
patent: 4621276 (1986-11-01), Malhi
patent: 4812889 (1989-03-01), Kakumu
patent: 4885625 (1989-12-01), Okazawa
patent: 4905059 (1990-02-01), Shur
patent: 4920400 (1990-04-01), Barsony
"Field Effect Transistor Device", Gaensslen et al., IBM Technical Disclosure Bulletin, vol. 13, #11, Apr. 1971, p. 3345.

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