Semiconductor device

Details Semiconductor device Semiconductor device

1995-03-28

1997-06-24

Ryan, Patrick

Stock material or miscellaneous articles

Composite

Of inorganic material

428689, B32B 900

Patent

active

056415818

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:

REFERENCES:
patent: 4476346 (1984-10-01), Tawada
patent: 5141894 (1992-08-01), Bisaro
patent: 5213628 (1993-05-01), Noguchi
patent: 5313075 (1994-05-01), Zhang

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