Semiconductor device

Details Semiconductor device Semiconductor device

1985-12-20

1987-09-15

Wojciechowicz, Edward J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 235, 357 41, 357 45, 365185, H01L 2978

Patent

active

046943145

ABSTRACT:
A semiconductor device in which a capacitor of a switched-capacitor included in an RC network for defining the rise time of a programming high-voltage pulse signal of an EEPROM is formed of an oxide film having a thickness corresponding to the thickness of a tunnel oxide film or an oxide film between a floating gate and a control gate so that a shift amount of a threshold voltage of a memory transistor is made constant even if the thickness of the tunnel oxide film or the oxide film between the floating gate and the control gate is deviated from a designed value.

REFERENCES:
patent: 4397077 (1983-08-01), Derbenwick et al.
patent: 4527258 (1985-07-01), Guterman
"High-Voltage Regulation and Process Considerations for High-Density 5V-only E.sup.2 PROM's by Duane H. Oto et al, IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, (1983), pp. 532-538.

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