Semiconductor device

Details Semiconductor device Semiconductor device

1985-09-25

1986-12-09

Edlow, Martin H.

357 22, 357 65, 357 67, 357 71, H01L 2948, H01L 2980

Patent

active

046283382

ABSTRACT:
A compact connection structure between two electrodes made of two types of metals, i.e., metals which respectively make Schottky and ohmic contact with a semiconductor, is provided by using a high melting point metal or silicide thereof which makes Schottky contact with the semiconductor as one electrode metal. The two types of electrodes can be brought into direct contact with each other, enabling elimination of through hole connections between them and therefore increased semiconductor device density.

REFERENCES:
patent: 3877051 (1975-04-01), Calhoun et al.
patent: 4048646 (1977-09-01), Ogawa et al.
patent: 4263605 (1981-04-01), Christan et al.
patent: 4300149 (1981-11-01), Howard et al.
patent: 4377030 (1983-03-01), Pettenpaul et al.
Murarka, J. Vac. Sci. Tech., 17(4), Jul./Aug. 1980, pp. 775-792.
IBM Technical Disclosure Bulletin, "Silicon Barrier Layer Metallurgy System for Ohmic or SBD Contacts", Alcorn et al., vol. 21, No. 6, Nov. 1978, pp. 2403-2405.
IBM Technical Disclosure Bulletin, "Metal Silicides for Schottky Barrier Diode Applications", Berenbaum et al., vol. 22, No. 10, Mar. 1980, pp. 4521-4522.

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