Semiconductor device

Details Semiconductor device Semiconductor device

1987-08-04

1990-01-02

Hille, Rolf

Fishing, trapping, and vermin destroying

357 54, 357 236, 437919, H01L 2702, H01L 2978, H01L 2934

Patent

active

048916846

ABSTRACT:
A reaction-preventing film is provided between a capacitor insulating film made of a material having a high dielectric constant, such as Ta.sub.2 O.sub.5, and an upper electrode in order to prevent a reaction of the upper electrode with the capacitor insulating film. This effectively prevents the reaction between the upper electrode and the capacitor caused by a heat treatment conducted after formation of the capacitor, and hence prevents an increase in leakage current caused by the reaction. Thus, the reliability of a semiconductor device is remarkably increased.

REFERENCES:
patent: 4038167 (1977-07-01), Young
patent: 4495219 (1985-01-01), Kato et al.
patent: 4603059 (1986-07-01), Kiyosumi et al.
patent: 4621277 (1986-11-01), Ito et al.

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