Semiconductor device

Details Semiconductor device Semiconductor device

1987-04-01

1989-02-28

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3073032, 3074821, 3074651, 307585, H04Q 900, H03K 17693, H03K 1716, H03K 501

Patent

active

048088447

ABSTRACT:
A semiconductor device formed on a semiconductor chip (1) comprises a plurality of first bonding pads (3a, 3d) for receiving an identical external signal, an internal circuit (8) connected to any one of the plurality of the first bonding pads, a second bonding pad (11) for receiving a control signal from outside the semiconductor chip, and a bonding pad selection switch (19) for selecting a bonding pad out of the plurality of first bonding pads and connecting it to the internal circuit in response to the control signal supplied thereto through the second bonding pad.

REFERENCES:
patent: 4384345 (1983-05-01), Mikome
patent: 4386284 (1983-05-01), Wacyk et al.
patent: 4491839 (1985-01-01), Adam
patent: 4523106 (1985-06-01), Tanizawa et al.
patent: 4638181 (1987-01-01), Deiss
patent: 4697095 (1987-09-01), Fujii
patent: 4733105 (1988-03-01), Shin et al.
IEEE International Solid-State Circuits Conference, Digest of Technical Papers, "A 1 Mb DRAM with Filded Capicator Cell Structure" by F. Horiguchi et al, pp. 244-245 and p. 355, 1985.
IEEE International Solid-State Circuits Conference, Digest of Technical Papers, "A 50 A Stand by 1 MW.times.lb/256 KW.times.4b CMOS DRAM" by S. Fujii et al, pp. 266-267, 1986.

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