Semiconductor device

Details Semiconductor device Semiconductor device

1992-03-20

1993-10-19

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257260, 257281, 257519, 257549, 437 31, 437 40, 437 63, 437154, 437175, 437911, H01L 2702, H01L 21265

Patent

active

052548643

ABSTRACT:
A semiconductor device wherein a bipolar transistor and a junction type field effect transistor which has a high voltage resisting property and a high mutual conductance are formed into a single chip to reduce the cost. A bipolar transistor formation region is separated from a junction type field effect transistor formation region by a transistor separating region. In the former region, a collector diffused layer is formed on the semiconductor substrate on which an epitaxial layer is formed, and a base diffused layer and a collector lead diffused layer are formed in the epitaxial layer with an element separating region interposed therebetween and connect to the collector diffused layer. Further, an emitter diffused layer is formed on the base diffused layer. In the latter region, a bottom gate diffused layer is formed on the semiconductor substrate, and a channel formation region is formed in the epitaxial layer and connects to the bottom gate diffused layer. A top gate electrode is formed on the channel formation region and a pair of source/drain diffused layers are formed on the opposite sides of the top gate diffused layer and so forth.

REFERENCES:
patent: 5068756 (1991-11-01), Morris et al.

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