Semiconductor device

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357 16, H01L 2712, H01L 29161

Patent

active

046202064

ABSTRACT:
A semiconductor device comprises a superlattice semiconductor portion having a plurality of pairs of superlattice semiconductor thin films for forming step differences of band edge energy. The pairs of the thin films are laminated such that parameters which determine the structure of the thin films are monotonically changed in the direction of the lamination of the thin films. Electrodes are disposed to apply an electric field across both ends of the superlattice semiconductor portion. The semiconductor device has a good negative resistance characteristic and a large design freedom of semiconductor device.

REFERENCES:
patent: 3626257 (1971-12-01), Esaki et al.
patent: 3626328 (1971-12-01), Esaki et al.
patent: 3893148 (1975-07-01), Madjid
patent: 4103312 (1978-07-01), Chang
patent: 4205329 (1980-05-01), Dingle
patent: 4205331 (1980-05-01), Esaki
patent: 4250515 (1981-02-01), Esaki
patent: 4503447 (1985-03-01), Iafrate

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