Semiconductor device

Measuring and testing – Volume or rate of flow – Thermal type

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G01F 168

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046515640

ABSTRACT:
A flow sensor comprising a pair of thin film heat sensors and a thin film heater is disclosed. A base supports the sensors and heater out of contact with the base with the sensors disposed on opposite sides of the heater. Also disclosed is a semiconductor device comprising a thin film member which comprises an electrical element. The device further comprises a semiconductor body supporting the thin film member out of contact with the body and apparatus for electrically pulsing the electrical element. Such devices are the basis for many types of apparatus, including flow sensors.

REFERENCES:
patent: 3359462 (1967-12-01), Schutze et al.
patent: 3758830 (1973-09-01), Jackson
patent: 3801949 (1974-04-01), Larrabbee
patent: 3881181 (1975-04-01), Khaiezadeh
patent: 3975951 (1976-08-01), Kohama et al.
patent: 3992940 (1976-11-01), Platzer, Jr.
patent: 4011745 (1977-03-01), Gatos et al.
patent: 4071838 (1978-01-01), Blocit
patent: 4074566 (1978-02-01), Obayashi et al.
patent: 4129848 (1978-12-01), Franit et al.
patent: 4134095 (1979-01-01), Reddy
patent: 4182937 (1980-01-01), Greenwood
patent: 4229979 (1980-10-01), Greenwood
patent: 4244225 (1981-01-01), Greenwood
patent: 4293373 (1981-10-01), Greenwood
patent: 4305298 (1981-12-01), Greenwood
patent: 4332000 (1982-05-01), Petersen
patent: 4343768 (1982-08-01), Kimura
patent: 4471647 (1984-09-01), Jerman et al.
Smith et al. "Pulsed Thermistor Technique for Very Low Flow Rates" in Rev. Sci. Inst. 10/81 pp. 1565-1568.
Malin et al., "Mass Flow Meter", in IBM Technical Disclosure Bulletin, vol. 21, #8, 1/79, p. 3227.
Bassous, E. et al., "The Fabrication of High Precision Nozzles by the Anisotropic Etching of (100) Silicon" IBM Thomas J. Watson Research Center, Yorktown, N.Y. , pp. 1321-1327.
Bassous, E. et al., "Ink Jet Printing Nozzle Arrays Etched in Silicon" IBM Thomas J. Watson Research Center, Yorktown, N.Y., vol. 31, No. 2, Jul. 1977.
Peterson, K. E., "Bistable Micromechanical Storage Element in Silicon" IBM Technical Disclosure Bulletin, vol. 20, No. 12, May 1978.
Petersen, K. E., "Micromechanical Generation of Acoustic Waves" IBM Technical Disclosure Bulletin, vol. 22, No. 9. Feb. 1980.
Pugacz-Muraszkiewics, I. J., "Detection of Discontinuities in Passivating Layers on Silicon by NaOH Anisotropic Etch" IBM J.Res.Develop., Sep. 1972, pp. 523-529.
Seidel and Csepreqi, "Studies on the Anisotropy and Selectivity of Etchants Used for the Fabrication of Stress-Free Structures" Extended Abstracts, vol. 82-1, Spring Meeting, Montreal, Calif., May 9-14, 1982.
Seidel and Csepregi, "Three-Dimensional Structuring of Silicon for Sensor Applications " Sensors and Actuators, 4(1983), 455-463.
"Integral Type Si Flow Sensor With Heat Insulation Structures" Toyota Central Research Lab.
L. Csepregi, "Micromechanics: A Silicon Microfabrication Technology" Microelectronic Engineering 3 (1985) 221-234.
Pugacz-Muraszkiewics, I. J. "Detection of Discontinuities in Passivating Layers on Silicon by NaOH Anisotropic Etch," IBM J. Res. Develop., Sep., 1972, pp. 523-529.
Petersen, K. E. "Micromechanical Light Modulator Array Fabricated on Silicon," Applied Physics Letters, vol. 31, No. 8, Oct. 15, 1977, pp. 521-523.
Terry, Stephen C., et al., "A Pocket-Sized Personal Air Contaminant Monitor," 175th National Meeting of the American Chemical Society, Mar. 15, 1978.
Bassous, Ernest, "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon," IEEE Transactions on Electron Devices, Vo. Ed. 25, NO. 10, Oct. 1978, pp. 1178-1185.
Petersen, K. E., "Dynamic Micromechanics on Silicon: Techniques and Devices," IEEE Transactions on Electron Devices, Vo. Ed. 25, No. 10, Oct. 1978, pp. 1241-1250.
Petersen, K. E. "Micromechanical Membrane Switches on Silicon," IBM J. Res. Develop., vol. 23, No. 4, Jul. 1979, pp. 376-385.
Roylance, Lynn M. "A Batch-Fabricated Silicon Accelerometer," IEEE Transaction on Electron Devices, vol. Ed. 26, No. 12, Dec. 1979, pp. 1911-1917.
Terry, Stephen C., et al., "A Gas Chromatographic Air Anglyzer Fabricated on a Silicon Wafer," IEEE Transactions on Electron Devices, vol. Ed. 26, No. 12, Dec. 1979, pp. 1880-1886.
Jolly, Richard D., et al. "Miniature Cantilever Beams Fabricated by Anisotropic Etching of Silicon," J. Electrochem. Soc., vol. 127, No. 12, Dec. 1980, pp. 2750-2754.
Teschler, Leland, "Ultraminiature," Machine Design, Jan. 8, 1981, pp. 112-117.
Kimura, M. "Microheater and Microbolometer Using Microbridge of SiO.sub.2 Film on Silicon," Electronics Letters, vol. 17, No. 2, Jan. 22, 1981, pp. 80-82.
Jackson, T. N. et al., "An Electrochemical P-14 N Junction Etch-Stop for the Formation of Silicon Microstructures." IEEE Transactions on Electron Devices, vol. EDL-2, No. 2, Feb. 1981, pp. 44-45.
Van Putten, A. F. P. et al., "Integrated Silicon Anemometer," Electronics Letters, vol. 10, No. 21, Oct. 17, 1974, pp. 425-426.
Van Riet, R. W. M. et al., "Integrated Direction-Sensitive Flowmeter," Electronics Letters, vol. 12, No. 24, Nov. 25, 1976, pp. 647-648.
Rahnamai, H. et al., "Pyroelectric Anemometers," 1980 International Electron Devices Meeting, Washington, D.C., Dec. 8-10, 1980, pp. 680-684.

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