Semiconductor device

Details Semiconductor device Semiconductor device

1988-02-24

1990-01-16

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 44, 357 4, 357 17, H01S 319

Patent

active

048948365

ABSTRACT:
A semiconductor device using the quantum effect of one dimension that arises in the direction vertical to the plane of a substrate on which the device structure is disposed, wherein the plane of the substrate is substantially the (111) plane.

REFERENCES:
patent: 4366569 (1982-12-01), Hirao et al.
patent: 4416012 (1983-11-01), Botez et al.
patent: 4480331 (1984-10-01), Thompson
patent: 4512022 (1985-04-01), Tsang
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4631802 (1986-12-01), Hayashi et al.
patent: 4635268 (1987-01-01), Motegi et al.
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 4750183 (1988-06-01), Takahashi et al.
patent: 4757510 (1988-06-01), Kaheno et al.
Patent Abstracts of Japan (Jun. 1984) 8(139), E-253,1576, Appln. No. 57-160054.
Patent Abstracts of Japan (Nov. 22, 1984) 9(256), E-280,1693, Appln. No. 59-127893.
Kurobe et al. (1986) Electronics Letters, 22(21):1117-1118.
T. Mimura et al., Jap. J. Appl. Phys. (1980) 19:L225-27.
W. T. Tsang, Appl. Phys. Lett. (1981) 39:786-88.
N. K. Dutta, J. Appl. Phys. (1982) 53:7211-14.
Smith, Jul./Aug. 1986, Xerox Disclosure Journal 11(4):151-152.
Hayakawa et al. (86) Applied Physics Letters, 49(11):636-638.
Patent Abstracts of Japan (11/29/85) 9(302), E-362,2025, Appln. No. 58-250138.
H. Iwamura et al., Elect. Lett. (1983) 19:180-81.
A. Sugimura, IEEE J. Quant Elec. (1984) QE-20:336-43.
D. A. B. Miller et al., IEEE J. Quant. Elect. (1985) QE-21:1462-76.
S. Tarucha et al., Jap. J. Appl. Phys. (1985) 24:L442-44.
K. Wakita et al., Surface Sci. (1986) 174:233-37.
D. A. B. Miller, Surface Sci. (1986) 174:221-32.
L. Esaki, IEEE J. Quant. Elect. (1986) QE-22:1611-24.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1340062