Semiconductor device

Details Semiconductor device Semiconductor device

1993-05-04

1994-09-06

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257 38, 257 39, 257222, 257224, 257232, 257233, 257242, 257243, 348249, 348311, H01L 2978, H01L 2714, H01L 3100

Patent

active

053450990

ABSTRACT:
In a CCD device, on a semiconductor substrate, and in the insulation films, plural first semiconductor regions and plural second semiconductor regions are formed buried in the insulation films, intermediating a tunneling insulation film therebetween in a manner to spatially isolate them from each other.

REFERENCES:
patent: 4878102 (1989-10-01), Bakker et al.
"Amorphous-silicon charge-coupled devices", Satoru Kishida et al, Applied Physics Letter, vol. 41 (No. 12), Dec. 15, 1982, pp. 1154-1156.
Carlo H. Sequin, et al: "Charge Transfer Device", published by Academic Press, Inc., in 1975; pp. 1-pp. 55.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1331251