Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-04-21
1994-09-27
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257587, 257592, 257751, 257758, 257765, H01L 2348
Patent
active
053509480
ABSTRACT:
Technology capable of simultaneously improving the state of filling in connection holes and the reliability of a wiring material in a bipolar semiconductor device or in a bipolar CMOS device. At least a tungsten film formed by the CVD method is included in a first wiring layer that accomplishes electrical conduction among the semiconductor elements by depositing an electrically conducting film on the connection holes formed in an insulating film deposited on the main surface of a semiconductor substrate. The tungsten film formed by the CVD method helps improve the state of filling in connection holes or deposition property, and enables the connection holes to be formed highly reliably. By using a tungsten film, furthermore, it is allowed to increase the resistance against electromigration of the wiring and to enhance reliability.
REFERENCES:
patent: 4107726 (1978-08-01), Schilling
patent: 4937657 (1990-06-01), DeBiasi et al.
patent: 5191405 (1993-03-01), Tomita et al.
Hitachi , Ltd.
Wojciechowicz Edward
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