Semiconductor device

Details Semiconductor device Semiconductor device

1993-04-07

1994-06-14

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257587, 257588, 257589, 257557, H01L 27082, H01L 27102, H01L 2970

Patent

active

053213017

ABSTRACT:
The present invention relates to a semiconductor device which comprises: an n.sup.- type buried collector provided on an n type silicon epitaxial layer disposed in an emitter opening; an n.sup.- type silicon collector disposed on said collector; a p.sup.+ type single crystal silicon intrinsic base layer; and an n.sup.+ type single crystal silicon emitter wherein said p.sup.+ type single crystal silicon intrinsic base layer is connected with a p.sup.+ type base electrode polycrystalline silicon through a p.sup.+ type polycrystalline silicon graft base.

REFERENCES:
patent: 4710241 (1987-12-01), Komatsu
patent: 4824799 (1989-04-01), Komatsu
patent: 5140400 (1992-08-01), Morishita
patent: 5227329 (1993-07-01), Kobayashi et al.
Tang, D. D. and Lu, P., "A Reduced-Field Design Concept for High-Performance Bipolar Transistors," IEEE Electron Device Letters, vol. 10, No. 2, Feb. 1989, pp. 67-69.
Lu, P., et al., "The Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors," IEEE Electron Device Letters, vol. 11, No. 8, Aug. 1990, pp. 336-338.
Konaka, S., et al., "A 20 ps/G Si Bipolar IC Using Advanced SST with Collector Ion Implantation," Abstracts of the 19th Conference on Solid State Devices and Materials, 1987, pp. 331-334.

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