Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-10-21
1999-01-19
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257554, 257592, H01L 2941, H01L 29732
Patent
active
058616594
ABSTRACT:
In a semiconductor device having regions of a vertical pnp bipolar transistor, that is, a collector region composed of a p-type semiconductor region, a base region composed of an n-type semiconductor region and an emitter region composed of a p-type semiconductor region, a metal electrode is connected to the base region with polysilicon doped with impurities being provided therebetween. In another form of a semiconductor device, an n.sup.+ region is provided within a base region of a vertical pnp bipolar transistor while surrounding an emitter region of the transistor.
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Canon Kabushiki Kaisha
Hardy David B.
Jackson, Jr. Jerome
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