1979-01-16
1981-09-29
Edlow, Martin H.
357 22, 357 48, 357 52, H01L 2990
Patent
active
042926424
ABSTRACT:
Semiconductor devices, one having a planar bipolar high-voltage semiconductor circuit element comprising an island-shaped region of one conductivity type. On its lower side the island-shaped region is bounded by a first pn junction having a comparatively high breakdown voltage, and laterally by a second pn junction having a comparatively low breakdown voltage. The doping and the thickness of the island-shaped region are so small that the region is entirely depleted before breakdown occurs.
The second semiconductor device having a field effect transistor of the lateral or vertical type with an island-shaped region having a contact region and bounded at the bottom by a pn junction having a comparatively high breakdown voltage and laterally by a second pn junction having a comparatively low breakdown voltage. The doping and thickness of the island-shaped region are so small that the region situated between the second pn junction and the contact region is fully depleted before breakdown at the second pn junction occurs.
REFERENCES:
patent: 3586931 (1971-06-01), Nienhuis
patent: 3999207 (1976-12-01), Arai
patent: 4017882 (1977-04-01), Kannom
patent: 4132996 (1979-01-01), Babga
patent: 4233617 (1980-11-01), Klassen
Appels Johannes A.
Collet Marnix G.
Hart Paul A. H.
Verhoeven Johannes F. C. M.
Briody Thomas A.
Cannon, Jr. James J.
Edlow Martin H.
Mayer Robert T.
U.S. Philips Corporation
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