Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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Details

257640, 257 66, H01L 2358

Patent

active

059905425

ABSTRACT:
A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.

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