Semiconductor device

Details Semiconductor device Semiconductor device

1997-02-26

1999-03-30

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 99, 257102, 257103, 257 15, 257 22, H01L 3300

Patent

active

058892958

ABSTRACT:
Disclosed is a long-life GaN-based semiconductor device which is achieved by reducing the operating voltage of the semiconductor device comprising a GaN-based or a ZnSe-based compound semiconductor formed on a sapphire substrate and by preventing the electromigration of metal atoms from an electrode into compound semiconductor layers. The operating voltage of the GaN-based or ZnSe-based semiconductor device formed on a sapphire substrate or a SiC substrate can be greatly reduced by employing a ZnO layer doped with a significant amount of Al as a material for forming ohmic contact to p- or n- compound semiconductor layers. The long-life GaN-based semiconductor device can be attained by preventing electromigration of atoms from a metallic electrode by use of ZnO layer. If a superlattice including the ZnO layer is employed as an optical guide layer or if the superlattice including the ZnO layer as an active layer, a long-life laser diode with a low operating voltage and a wide wavelength range can be obtained.

REFERENCES:
patent: 5617446 (1997-04-01), Ishibashi et al.
patent: 5670798 (1997-09-01), Schetzina
Publication: Applied Physics Letters: vol.66 No. 22 pp. 2688-2690, T. Detchprohm et al "Hydride Vapor Phase Epitaxial Growth Of A High Quality GaN Film Using A ZnO Buffer Layer", Nov. 1992.

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