Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 99, 257102, 257103, 257 15, 257 22, H01L 3300

Patent

active

058892958

ABSTRACT:
Disclosed is a long-life GaN-based semiconductor device which is achieved by reducing the operating voltage of the semiconductor device comprising a GaN-based or a ZnSe-based compound semiconductor formed on a sapphire substrate and by preventing the electromigration of metal atoms from an electrode into compound semiconductor layers. The operating voltage of the GaN-based or ZnSe-based semiconductor device formed on a sapphire substrate or a SiC substrate can be greatly reduced by employing a ZnO layer doped with a significant amount of Al as a material for forming ohmic contact to p- or n- compound semiconductor layers. The long-life GaN-based semiconductor device can be attained by preventing electromigration of atoms from a metallic electrode by use of ZnO layer. If a superlattice including the ZnO layer is employed as an optical guide layer or if the superlattice including the ZnO layer as an active layer, a long-life laser diode with a low operating voltage and a wide wavelength range can be obtained.

REFERENCES:
patent: 5617446 (1997-04-01), Ishibashi et al.
patent: 5670798 (1997-09-01), Schetzina
Publication: Applied Physics Letters: vol.66 No. 22 pp. 2688-2690, T. Detchprohm et al "Hydride Vapor Phase Epitaxial Growth Of A High Quality GaN Film Using A ZnO Buffer Layer", Nov. 1992.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1217044

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.