Semiconductor device

Details Semiconductor device Semiconductor device

1991-05-20

1992-10-06

Prenty, Mark V.

357 64, 357 22, 357 232, H01L 29167, H01L 2980, H01L 2920

Patent

active

051537036

ABSTRACT:
In a semiconductor device constituting a GaAs MESFET, a GaAs substrate is prepared from a base material containing boron and carbon ions as impurities having a total impurity concentration of 2.times.10.sup.17 atoms/cm.sup.3 or more. Electrode layers are formed at predetermined portions on the GaAs substrate, and an active layer is formed to be adjacent to the electrode layers by ion implantation. Source and drain electrodes are formed on the electrode layers, respectively, and a gate electrode is formed on the active layer.

REFERENCES:
patent: 4602965 (1986-07-01), McNally
patent: 4670176 (1987-06-01), Morioka et al.
patent: 4905061 (1990-02-01), Ohmuro et al.
"IEEE Transaction on Electron Devices", vol. ED-34, No. 6, Jun. 1987, pp. 1239-1244.

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