Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1997-07-17
2000-04-11
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257162, 257343, H01L 2974, H01L 31111, H01L 2976
Patent
active
060490950
ABSTRACT:
A semiconductor device includes a p channel MOS transistor with a p.sup.- diffusion region, a p.sup.+ diffusion region and a gate electrode formed on the main surface of an n.sup.- layer on a buried oxide film. The p.sup.- diffusion region includes a plurality of branch-like regions to be connected to a p.sup.+ diffusion region. A source electrode is formed at the p.sup.+ diffusion region. An n.sup.+ diffusion region is formed within the p.sup.+ diffusion region. A drain electrode is connected to the p.sup.+ diffusion region and the n.sup.+ diffusion region. According to this structure, the depletion layer between the source electrode and the drain electrode is expanded. A semiconductor device is achieved that is improved in the breakdown voltage at the time of an off operation, or that is improved in on driving current at the time of an on operation with improved breakdown voltage at the time of an off operation.
REFERENCES:
patent: 5294824 (1994-03-01), Okada
patent: 5428241 (1995-06-01), Terashima
"A Versatile 700-1200-V IC Process for Analog and Switching Applications". A W. Ludikhuize, IEEE Transactions on Electron Devices, vol. 38. No. 7 Jul. 1991, pp. 1582-1589.
"Numerical Predictions of p-channel SOI LIGBT Electrical Characteristics". Funaki et al., Proceedings of 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp. 350-353.
Fahmy Wael M.
Mitsubishi Denki & Kabushiki Kaisha
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