Semiconductor device

Details Semiconductor device Semiconductor device

1980-02-04

1981-08-25

Edlow, Martin H.

357 4, 357 16, 357 57, H01G 2988

Patent

active

042862752

ABSTRACT:
A three-terminal semiconductor device having a switching time in the vicinity of 10.sup.-12 seconds and exhibiting a dynamic negative resistance is made up of a thin barrier region in the emitter section having a barrier height that is higher than a wider barrier region in the collector section separated by a base region having a width comparable to the mean-free path length of a majority carrier. The device employs quantum mechanical tunneling as the dominant current flow mechanism from the emitter region to the base region and hot majority carrier transfer as the dominant current flow mechanism through the base region to the collector region.

REFERENCES:
patent: 3250966 (1966-05-01), Rose
patent: 3310685 (1967-03-01), Schmidlin
patent: 3329823 (1967-07-01), Handy et al.
patent: 3372315 (1968-03-01), Hartman
patent: 3447045 (1969-05-01), Hickmott
patent: 3569801 (1971-03-01), Giaeves
patent: 3929527 (1975-12-01), Chang
patent: 3947681 (1976-03-01), Javan
patent: 3993963 (1976-11-01), Logan
patent: 4017332 (1977-04-01), James
patent: 4173763 (1979-11-01), Charg et al.
Heiblum, Characteristics of Metal-Oxide-Metal Devices, PhD Thesis, University Microfilms International, Ann Arbor, MI, 1980.
Mead, I.R.E., Dec. 28, 1959, pp. 359 et seq.
Spratt et al., Phys. Rev. Ltrs. 6, 341, 1961.

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