Measuring and testing – Volume or rate of flow – Thermal type
Patent
1985-10-01
1986-11-25
Goldstein, Herbert
Measuring and testing
Volume or rate of flow
Thermal type
338319, 338 25, G01F 168
Patent
active
046241370
ABSTRACT:
A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises a member comprising a thermal-to-electric transducer or static electric element or electrical-to-thermal element, the member having a predetermined configuration suspended over the depression. The member is connected to the first surface at least at one location, the depression opening to the first surface around at least a portion of the predetermined configuration. The depression provides substantial physical and thermal isolation between the element and the semiconductor body. In this manner, an integrated semiconductor device provides an environment of substantial physical and thermal isolation between the transducer or element and the semiconductor body.
REFERENCES:
patent: 3607084 (1971-09-01), Mackey et al.
patent: 3801949 (1974-04-01), Larrabee
patent: 4320655 (1982-03-01), Kammermaier
patent: 4332000 (1982-05-01), Petersen
Bassous, Ernest, "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon," IEEE Transactions of Electron Devices, vol. Ed. 25, No. 10, Oct. 1978, pp. 1178-1185.
Jackson, T. N. et al., "An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures," IEEE Transactions on Electron Devices, vol. EDL-2, No. 2, Feb. 1981, pp. 44-45.
Jolly, Richard D. et al., "Miniature Cantilever Beams Fabricated by Anisotropic Etching of Silicon," J. Electronics Soc., vol. 127, No. 12, Dec. 1980, pp. 2750-2754.
Kimura, M., "Microheater and Microbolometer Using Microbridge of SiO.sub.2 Film on Silicon," Electronics Letters, vol. 17, No. 2, Jan. 22, 1981, pp. 80-82.
Petersen, K. E., "Dynamic Micromechanics on Silicon: Techniques and Devices," IEEE Transactions on Electron Devices, vol. Ed. 25, No. 10, Dec. 1978, pp. 1241-1250.
Petersen, K. E., Micromechanical Light Modulator Array Fabricated on Silicon," Applied Physics Letters, vol. 31, No. 8, Oct. 15, 1977, pp. 521-523.
Petersen, K. E., "Micromechanical Membrane Switches on Silicon," IBM J. Res. Develop., vol. 23, No. 4, Jul. 1979, pp. 376-385.
Pugacz-Muraszkiewicz, I. J., "Detection of Discontinuities in Passivating Layers on Silicon by NaOH Anisotropic Etch," IBM J. Res. Develop., Sep. 1972, pp. 523-529.
Rahnamai, H. et al., "Pyroelectric Anemometers," 1980 International Electron Devices Meeting, Washington, D.C. Dec. 8-10, 1980, pp. 680-684.
Roylance, Lynn M., "A Batch-Fabricated Silicon Accelerometer," IEEE Transaction on Electron Devices, vol. #d., 26, No. 12, Dec. 1979, pp. 1911-1917.
Terry, Stephen C. et al., "A Gas Chromatographic Air Analyzer Fabricated on a Silicon Wafer," IEEE Transactions on Electron Devices, vol. Ed. 26, Dec. 1979, pp. 1880-1886.
Terry, Stephen C. et al., "A Pocket-Sized Personal Air Contaminant Monitor," 175th National Meeting of the American Chemical Society, Mar. 15, 1978.
Teschler, Leland, "Ultraminiature Mechanics," Machine Design, Jan. 8, 1981, pp. 112-117.
Van Putten, A. F. P. et al., "Integrated Silicon Anemometer," Electronics Letters, vol. 10, No. 21, Oct. 17, 1974, pp. 425-426.
Van Riet, R. W. M. et al., "Integrated Direction-Sensitive Flowmeter," Electronics Letters, vol. 12, No. 24, Nov. 25, 1976, pp. 647-648.
Bassous, E. et al., "The Fabrication of High Precision Nozzles by the Anisotropic Etching of (100) Silicon," IBM Thomas J. Watson Research Center, Yorktown, NY , pp. 1321-1327.
Bassous, E. et al., "Ink Jet Printing Nozzle Arrays Etched in Silicon," IBM Thomas J. Watson Research Center, Yorktown, NY, vol. 31, No. 2, Jul. 1977.
Petersen, K. E., "Bistable Micromechanical Storage Element in Silicon," IBM Technical Disclosure Bulletin, vol. 20, No. 12, May 1978.
Petersen, K. E., "Micromechanical Generation of Acoustic Waves," IBM Technical Disclosure Bulletin, vol. 22, No. 9, Feb. 1980.
Seidel and Csepregi, "Studies on the Anisotropy and Selectivity of Etchants used for the Fabrication of Stress-Free Structures," Extended Abstracts, vol. 82-1, Spring Meeting, Montreal, Canada, May 9-14, 1982.
Seidel and Csepregi, "Three-Dimensional Structuring of Silicon for Sensor Applications," Sensors and Actuators, 4(1983), 455-463.
"Integral Type Si Flow Sensor with Heat Insulation Structures," Toyota Central Research Lab. (see attached translation).
L. Csepregi, "Micromechanics: a Silicon Microfabrication Technology," Microelectronic Engineering 3 (1985) 221-234.
Higashi Robert E.
Johnson Robert G.
Goldstein Herbert
Honeywell Inc.
Mersereau Charles G.
Sumner John P.
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1152846