Semiconductor device

Details Semiconductor device Semiconductor device

1978-03-22

1980-03-18

Moskowitz, Nelson

Amplifiers

Parametric amplifiers

Semiconductor type

350 9617, 350 9619, 331 945H, H01S 319

Patent

active

041941624

ABSTRACT:
A semiconductor device includes a semiconductor layer on one side of a semiconductor body to define a pn-junction therebetween, diffraction gratings formed at a distance from each other on the top of said semiconductor layer, and electrodes formed between the diffraction gratings on the top of said semiconductor and formed on the other side of the semiconductor body.

REFERENCES:
patent: 3242440 (1966-03-01), Koester et al.
patent: 3724926 (1973-04-01), Lee
patent: 4093345 (1978-06-01), Logan et al.
Tsukada et al., "Q-Switching of Semiconductor Lasers", 2/77, p. 37, IEEE Jour. Quant. Elec., vol. QE5, #2.
Yen et al., "GaAs Distributed Bragg Reflector Lasers", 6/76, pp. 213-218, Optics Comm., vol. 17, #3.
Kazarinov et al., "Injection Hetrojunction . . . Surface", 1/73, pp. 1184-1189, Soviet Physics Semiconductors, vol. 6, #7.
Taylor et al., "Guided Wave Optics", 8/74, pp. 1044-1060, Proceeding of the IEEE, vol. 62, #8.

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