Semiconductor device

Details Semiconductor device Semiconductor device

1997-08-13

1998-08-18

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257190, 257192, 257194, 438167, 438571, 438577, H01L 310328, H01L 2980

Patent

active

057961328

ABSTRACT:
On a semiconductor substrate with an active layer, a first-stage recess groove is formed by photolithography and wet or dry etching. On the semiconductor substrate and the surface of the first-stage recess groove, a surface passivation film a crystalline material such as i-GaAs or an insulating film of, e.g., SiON, is formed. The surface passivation film on an area where an ohmic electrodes is to be formed is removed and the ohmic electrode is formed on the area by vapor deposition. Thereafter, in the first-stage recess groove, a second-stage recess groove is formed by photolithography and wet or dry etching. A gate electrode is formed on the second-stage recess groove by sputtering or the like.

REFERENCES:
patent: 4733283 (1988-03-01), Kuroda
patent: 5347141 (1994-09-01), Wybourne et al.
patent: 5362677 (1994-11-01), Sakamoto et al.
patent: 5393990 (1995-02-01), Kohn
patent: 5430310 (1995-07-01), Shibasaki et al.
patent: 5486710 (1996-01-01), Kitano

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