Amplifiers – With semiconductor amplifying device – Integrated circuits
Patent
1998-10-08
2000-05-09
Pascal, Robert
Amplifiers
With semiconductor amplifying device
Integrated circuits
330295, H03F 314, H03F 368
Patent
active
060609516
ABSTRACT:
A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface opposite the first main surface; a semiconductor chip amplifying a high frequency signal and including semiconductor cells on the first main surface, each semiconductor cell including semiconductor components and being connected to a gate pad and a drain pad, each semiconductor component having an electrode; internal matching circuits; a harmonic matching circuit for each semiconductor cell and connected between the semiconductor chip and one of the internal matching circuits, the harmonic matching circuit including a capacitor and an inductor; and a package enclosing the semiconductor substrate, the semiconductor chip, the internal matching circuits, and the harmonic matching circuit. In this structure, since harmonics are processed in each semiconductor cell, the phases of the harmonics processed in the semiconductor cells are uniform. Losses caused by the characteristic of harmonic signals themselves and a phase difference due to transmission line differences between the harmonic matching circuit and the semiconductor chip are reduced, improving harmonic load impedance.
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Raab, "Class-F Power Amplifiers With Maximally Flat Waveforms", IEEE Transactions on Microwave Theory and Tecniques, vol. 45, No. 11, Nov. 1997, pp. 2007-2012.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Patricia T.
Pascal Robert
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