Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1997-07-30
2000-05-09
Picard, Leo P.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257690, 257700, 257691, 257738, H01L 2312, H01L 2314
Patent
active
060607750
ABSTRACT:
The goal of the present invention is in the manufacture of BGA type semiconductor IC packages, to obviate the processing step in which the through-holes in the insulating substrate are filled with solder paste, and to reduce the thermal stress at the bonding portion of the solder balls.
This goal is achieved through the following. Through-holes (2a) are formed on insulating substrate (2) at positions corresponding to the positions where the solder balls are formed. On the surface of the insulating substrate where chip (3) is carried, conductor pattern (6) is formed, with the end [of each portion] of the conductor pattern positioned above through-hole (2a). The region of the aforementioned conductor pattern on each through-hole has portion (6d) protruding into the through-hole. Solder ball (7) is moved and carried on each through-hole to make contact with said bump portion (6d). In this state, the solder balls are melted and bump portions (6d) are directly bonded on solder balls (7). It is possible to form bump portions (6d) by performing buckling processing of the pattern. The bumps formed by buckling processing can reduce the thermal stress applied on these portions.
REFERENCES:
patent: 5239198 (1993-08-01), Lin et al.
patent: 5583376 (1996-12-01), Sickler et al.
patent: 5598321 (1997-01-01), Mostafazadeh et al.
patent: 5640047 (1997-06-01), Nakashima
patent: 5708567 (1998-01-01), Shim et al.
patent: 5753974 (1998-05-01), Masukawa
patent: 5886409 (1999-03-01), Ishino et al.
Patent Abstracts of Japan, Voltage. 96, No. 6, Jun. 28, 1996, JP 8-46351 A (M&M Prod K.K.), Feb. 16, 1996.
Duong Hung Van
Kempler William B.
Picard Leo P.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
LandOfFree
Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1067786