Semiconductor device

Details Semiconductor device Semiconductor device

1991-09-30

1996-08-27

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

361 91, 361111, 361118, H01L 2900

Patent

active

055506984

ABSTRACT:
In a semiconductor device, impurity density at a base region of a protection transistor (9) is lower than impurity density at base regions of transistors (1, 2) which constitute a Darlington transistor (100). With high voltage impressed on a first output terminal (6), the protection transistor (9) first turns on because the impurity density at its base region is the lowest. Current thus allowed into the protection transistor (9) is amplified at the Darlington transistor (100) so that current equivalent to the amplified current is pulled out from current flowing in the output terminal (6). As a result, the first output terminal (6) is freed from high voltage impressed thereupon. The protection transistor (9) is obtainable in a process for forming the transistors (1, 2) by only lowering impurity density of the protection transistor (9) at the base region, thus omitting a special step for forming the protection transistor (9). Hence, cost for fabricating the semiconductor device is reduced.

REFERENCES:
patent: 4291319 (1981-09-01), Carinalli

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